Variation of Band Gap in Graphene Grown by Plasma Enhanced Chemical Vapor Deposition by Heetae Kim* in Annals of Chemical Science Research_ Journal of Advanced Chemical Sciences
Abstract
We
report the transport behavior of graphene grown by plasma enhanced chemical vapor
deposition (PECVD). The graphene films were grown at 950 °C for 5, 10, 30 and
60min, respectively. Raman spectra showed that the synthesized films are
bilayer with strong defect peaks. The temperature dependent
conductivity of graphene films showed the band gap modulation with increasing growth
times. Thermally activated (TA) conduction model showed that the values of band
gap of graphene films are 95, 73, 48 and 36meV for 5, 10, 30 and 60min growth
times, respectively
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