Variation of Band Gap in Graphene Grown by Plasma Enhanced Chemical Vapor Deposition_ Crimson Publishers

Variation of Band Gap in Graphene Grown by Plasma Enhanced Chemical Vapor Deposition by Heetae Kim* in Annals of Chemical Science Research_ Journal of Advanced Chemical Sciences

 

Abstract
We report the transport behavior of graphene grown by plasma enhanced chemical vapor deposition (PECVD). The graphene films were grown at 950 °C for 5, 10, 30 and 60min, respectively. Raman spectra showed that the synthesized films are bilayer with strong defect peaks. The temperature dependent conductivity of graphene films showed the band gap modulation with increasing growth times. Thermally activated (TA) conduction model showed that the values of band gap of graphene films are 95, 73, 48 and 36meV for 5, 10, 30 and 60min growth times, respectively

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