Estimation of The Lattice Parameters, Crystallite Size and Internal Micro Strain of Cu1-Xinxse2 Thin Films by Williamson-Hall Method_ Crimson Publishers

 Estimation of The Lattice Parameters, Crystallite Size and Internal Micro Strain of Cu1-Xinxse2 Thin Films by Williamson-Hall Method by Korablev Grigory Andreevich* in Determinations in Nanomedicine & Nanotechnology_ Journal of Nanotechnology

 

Abstract
In this work, Cu1-xInxSe2 thin films have been grown on heated glass substrates using chemical spray pyrolysis. Characterizations and compositional analysis of Cu1-xInxSe2 thin films were obtained by X-ray Diffraction (XRD) and Electron Dispersion Analysis (EDX). Microstructure parameters as a function of Cu/In and the substrate temperature (Tsub) in the range of 548K to 623K have been study. Williamson-Hall method has been used to determine the crystallite size, microstrain. XRD revealed that a polycrystalline CuInSe2 thin films with the hexagonal structure having preferential growth along the <002> direction. At the Cu/In ratio increased, improved of the degree of crystallinity and decrement of both, the lattice parameters and volume of unit cell. Also, the crystallite size was found to be increased and decreased with the growth temperature. On the contrary, the microstrain values were decreasing with the growth temperature and Cu/In ratio were increasing

Copper Indium di-Selenide (CIS) is one of the most promising semiconductor materials used in solar cells in recent years due to its favorable electrical and optical properties, durability and cost-effectiveness [1-5]. CuInSe2 is a member of the I-III-VI2 semiconductor group and is present in the chalcopyrite phase of the zinc blende family [4]. Various methods such as Molecular Been Epitaxial (MBE) [6], flash vaporation [7,8], multi-source evaporation [9], single-source evaporation [10], RF-sputtering [11], spray pyrolysis [12,13], Chemical precipitation [14] and Stacked Elemental Layer (SEL) [15,16] were developed to synthesize CuInSe₂ thin films

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